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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 15.7 dB
Transistor Type : HEMT
Pd - Power Dissipation : 9.1 W
Package / Case : QFN-32
Output Power : 5.7 W
Vds - Drain-Source Breakdown Voltage : 32 V
Packaging : Tray
Id - Continuous Drain Current : 0.6 A
Vgs - Gate-Source Breakdown Voltage : - 2.7 V
Manufacturer : Qorvo
Description : RF JFET Transistors .03-3.5GHz PAE 64.7% P3dB 5.7W @3GHz 32V
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T1G3000532-SM Images |