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QPD1000

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Shenzhen Chive Electronics Co., Ltd.

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QPD1000

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 19 dB

Transistor Type : HEMT

Output Power : 24 W

Package / Case : QFN-8

Maximum Operating Temperature : + 85 C

Vds - Drain-Source Breakdown Voltage : 28 V

Packaging : Tray

Id - Continuous Drain Current : 817 mA

Vgs - Gate-Source Breakdown Voltage : 100 V

Pd - Power Dissipation : 28.8 W

Manufacturer : Qorvo

Description : RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN

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The QPD1000,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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