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Transistor Polarity : N-Channel
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 18 dB
Transistor Type : pHEMT
Pd - Power Dissipation : 300 mW
Package / Case : SOT-343
Maximum Operating Temperature : + 160 C
Vds - Drain-Source Breakdown Voltage : 5.5 V
Packaging : Bulk
Id - Continuous Drain Current : 80 mA
Vgs - Gate-Source Breakdown Voltage : - 5 V
Manufacturer : Avago / Broadcom
Description : RF JFET Transistors Transistor GaAs Low Noise
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ATF-35143-BLKG Images |