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Vgs - Gate-Source Breakdown Voltage : - 15 V
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 13 dB
Transistor Type : pHEMT
Pd - Power Dissipation : 1.4 W
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 8 V
Packaging : Gel Pack
Id - Continuous Drain Current : 129 mA
Manufacturer : Qorvo
Description : RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
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