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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : Screw
Gain : 20 dB
Transistor Type : HEMT
Output Power : 70 W
Package / Case : NI-360
Maximum Operating Temperature : + 85 C
Vds - Drain-Source Breakdown Voltage : 50 V
Packaging : Tray
Id - Continuous Drain Current : 2.5 A
Vgs - Gate-Source Breakdown Voltage : 145 V
Pd - Power Dissipation : 64 W
Manufacturer : Qorvo
Description : RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
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