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TGA2601-SM-T/R

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Shenzhen Chive Electronics Co., Ltd.

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TGA2601-SM-T/R

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 19 dB

Transistor Type : pHEMT

Pd - Power Dissipation : 500 mW

Package / Case : QFN-16

Maximum Operating Temperature : + 200 C

Vds - Drain-Source Breakdown Voltage : 5 V

Packaging : Reel

Id - Continuous Drain Current : 100 mA

Manufacturer : Qorvo

Description : RF JFET Transistors 800-3000MHz NF .7dB Gain 19dBm

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The TGA2601-SM-T/R,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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