Sign In | Join Free | My infospaceinc.com |
|
Transistor Polarity : N-Channel
Technology : GaN
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 13 dB
Transistor Type : HEMT
Output Power : 120 W
Package / Case : Bare Die
Maximum Operating Temperature : -
Vds - Drain-Source Breakdown Voltage : 120 V
Packaging : Waffle
Maximum Drain Gate Voltage : -
Id - Continuous Drain Current : 12 A
Vgs - Gate-Source Breakdown Voltage : - 10 V to + 2 V
Pd - Power Dissipation : -
Manufacturer : Wolfspeed / Cree
Description : RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
![]() |
CGH60120D Images |