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CGHV59350F

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CGHV59350F

Vgs - Gate-Source Breakdown Voltage : - 10 V, 2 V

Technology : GaN

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 11 dB

Transistor Type : HEMT

Output Power : 450 W

Maximum Operating Temperature : + 85 C

Packaging : Tray

Vds - Drain-Source Breakdown Voltage : 125 V

Manufacturer : Wolfspeed / Cree

Description : RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt

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The CGHV59350F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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