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TGF2021-12

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Shenzhen Chive Electronics Co., Ltd.

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TGF2021-12

Vgs - Gate-Source Breakdown Voltage : - 8 V

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 11 dB

Transistor Type : pHEMT

Package / Case : Die 18

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 12 V

Packaging : Gel Pack

Id - Continuous Drain Current : 3.6 A

Manufacturer : Qorvo

Description : RF JFET Transistors DC-12GHz 12mm Pwr pHEMT (0.35um)

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The TGF2021-12,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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