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Vgs - Gate-Source Breakdown Voltage : - 5 V to 1 V
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 20 dB
Transistor Type : EpHEMT
Pd - Power Dissipation : 1 W
Package / Case : LPCC-8
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 7 V
Packaging : Reel
Id - Continuous Drain Current : 300 mA
Manufacturer : Avago / Broadcom
Description : RF JFET Transistors Transistor GaAs High Linearity
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