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Vgs - Gate-Source Breakdown Voltage : - 3 V
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 12 dB
Transistor Type : pHEMT
Pd - Power Dissipation : 2.1 W
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 8 V
Packaging : Gel Pack
Id - Continuous Drain Current : 194 mA
Manufacturer : Qorvo
Description : RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
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