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QPD1009

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Shenzhen Chive Electronics Co., Ltd.

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QPD1009

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 24 dB

Transistor Type : HEMT

Output Power : 17 W

Package / Case : QFN-16

Maximum Operating Temperature : + 85 C

Vds - Drain-Source Breakdown Voltage : 50 V

Packaging : Tray

Id - Continuous Drain Current : 700 mA

Vgs - Gate-Source Breakdown Voltage : 145 V

Pd - Power Dissipation : 17.5 W

Manufacturer : Qorvo

Description : RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

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The QPD1009,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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