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T1G6001032-SM

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Shenzhen Chive Electronics Co., Ltd.

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T1G6001032-SM

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 19 dB

Transistor Type : HEMT

Pd - Power Dissipation : 16 W

Vds - Drain-Source Breakdown Voltage : 32 V

Packaging : Tray

Maximum Drain Gate Voltage : - 2.9 V

Id - Continuous Drain Current : 1.2 A

Manufacturer : Qorvo

Description : RF JFET Transistors DC-6GHz 32Volt GaN 10 Watt Peak

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The T1G6001032-SM,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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