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TGF2080

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Shenzhen Chive Electronics Co., Ltd.

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TGF2080

Vgs - Gate-Source Breakdown Voltage : - 7 V

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 11.5 dB

Transistor Type : pHEMT

Pd - Power Dissipation : 4.2 W

Package / Case : 0.41 mm x 0.34 mm x 0.1 mm

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 12 V

Packaging : Tray

Maximum Drain Gate Voltage : - 12 V

Id - Continuous Drain Current : 259 mA

Manufacturer : Qorvo

Description : RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%

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The TGF2080,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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