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Vgs - Gate-Source Breakdown Voltage : - 7 V
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 11.5 dB
Transistor Type : pHEMT
Pd - Power Dissipation : 4.2 W
Package / Case : 0.41 mm x 0.34 mm x 0.1 mm
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 12 V
Packaging : Tray
Maximum Drain Gate Voltage : - 12 V
Id - Continuous Drain Current : 259 mA
Manufacturer : Qorvo
Description : RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%
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