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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 17.4 dB
Transistor Type : HEMT
Output Power : 132 W
Package / Case : Flange Ceramic-2
Maximum Operating Temperature : + 85 C
Vds - Drain-Source Breakdown Voltage : 50 V
Packaging : Waffle
Id - Continuous Drain Current : 7.2 A
Vgs - Gate-Source Breakdown Voltage : - 2.8 V
Pd - Power Dissipation : 140 W
Manufacturer : Qorvo
Description : RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
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