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Transistor Polarity : N-Channel
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 14 dB
Transistor Type : HFET
Pd - Power Dissipation : 175 mW
Package / Case : FTSMM-4 (M04)
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 4 V
Packaging : Reel
Id - Continuous Drain Current : 120 mA
Vgs - Gate-Source Breakdown Voltage : - 3 V
Manufacturer : CEL
Description : RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
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NE3508M04-T2-A Images |