Sign In | Join Free | My infospaceinc.com |
|
Transistor Polarity : N-Channel
Technology : Si
Product Category : RF MOSFET Transistors
Mounting Style : SMD/SMT
Gain : 18.5 dB
Output Power : 55 W
Package / Case : H-37260-2
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 65 V
Packaging : Reel
Id - Continuous Drain Current : 1.85 A
Rds On - Drain-Source Resistance : 0.04 Ohms at 10 V
Manufacturer : Infineon Technologies
Description : RF MOSFET Transistors Hi Pwr RF LDMOS FET 220 W 920-960 MHZ
![]() |
PTFA092201F V4 R250 Images |