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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 19.6 dB
Transistor Type : HEMT
Output Power : 44.5 dBm
Package / Case : Die
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 32 V
Packaging : Waffle
Id - Continuous Drain Current : 1.7 A
Pd - Power Dissipation : 34.5 W
Manufacturer : Qorvo
Description : RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
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