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Vgs - Gate-Source Breakdown Voltage : - 5 V to 0.8 V
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 15 dB
Transistor Type : EpHEMT
Pd - Power Dissipation : 3.5 W
Package / Case : LPCC-8
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 7 V
Packaging : Bulk
Maximum Drain Gate Voltage : - 5 V to + 1 V
Id - Continuous Drain Current : 1 A
Manufacturer : Avago / Broadcom
Description : RF JFET Transistors Transistor GaAs High Linearity
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