Sign In | Join Free | My infospaceinc.com |
|
Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 18.4 dB
Transistor Type : HEMT
Pd - Power Dissipation : 117 W
Output Power : 24 W
Vds - Drain-Source Breakdown Voltage : 36 V
Packaging : Tray
Maximum Drain Gate Voltage : - 2.9 V
Id - Continuous Drain Current : 12 A
Manufacturer : Qorvo
Description : RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
![]() |
T1G4012036-FL Images |