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T1G4012036-FL

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Shenzhen Chive Electronics Co., Ltd.

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T1G4012036-FL

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 18.4 dB

Transistor Type : HEMT

Pd - Power Dissipation : 117 W

Output Power : 24 W

Vds - Drain-Source Breakdown Voltage : 36 V

Packaging : Tray

Maximum Drain Gate Voltage : - 2.9 V

Id - Continuous Drain Current : 12 A

Manufacturer : Qorvo

Description : RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak

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The T1G4012036-FL,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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