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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 11 dB
Transistor Type : HEMT
Output Power : 19 W
Package / Case : QFN-20
Maximum Operating Temperature : + 225 C
Vds - Drain-Source Breakdown Voltage : 32 V
Packaging : Tray
Id - Continuous Drain Current : 1.3 A
Vgs - Gate-Source Breakdown Voltage : - 2.7 V
Pd - Power Dissipation : 33 W
Manufacturer : Qorvo
Description : RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
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