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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 15 dB
Transistor Type : HEMT
Pd - Power Dissipation : 28 W
Output Power : 17 W
Vds - Drain-Source Breakdown Voltage : 100 V
Packaging : Tray
Id - Continuous Drain Current : 5 A
Manufacturer : Qorvo
Description : RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
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T2G6001528-SG Images |