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Transistor Polarity : N-Channel
Technology : GaN
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 18 dB
Transistor Type : HEMT
Output Power : 30 W
Package / Case : DFN
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 84 V
Packaging : Reel
Maximum Drain Gate Voltage : 28 V
Id - Continuous Drain Current : 7 A
Vgs - Gate-Source Breakdown Voltage : - 10 V, 2 V
Pd - Power Dissipation : 21.6 W
Manufacturer : Wolfspeed / Cree
Description : RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
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