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TGF2025

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Shenzhen Chive Electronics Co., Ltd.

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TGF2025

Vgs - Gate-Source Breakdown Voltage : - 15 V

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 14 dB

Transistor Type : pHEMT

Pd - Power Dissipation : 0.89 W

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 8 V

Packaging : Gel Pack

Maximum Drain Gate Voltage : 12 V

Id - Continuous Drain Current : 81 mA

Manufacturer : Qorvo

Description : RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm

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The TGF2025,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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